Self-formed nanometer channel at wafer scale

ABSTRACT

A mechanism is provided for fabricating nanochannels for a nanodevice. Insulating film is deposited on a substrate. A nanowire is patterned on the film. Insulating material is deposited on the nanowire and film. A first circular hole is formed in the insulating material as an inlet, over a first tip of the nanowire to expose the first tip. A second circular hole is formed as an outlet, over a second tip of the nanowire opposite the first tip to expose the second tip. A nanochannel connects the first and second holes by etching away the nanowire via an etchant in the first and the second holes. A first reservoir is attached over the first hole in connection with the nanochannel at a previous location of the first tip. A second reservoir is attached over the second hole in connection with the nanochannel at a previous location of the second tip.

BACKGROUND

The present invention relates to nanochannels, and more specifically, toself-formed nanochannels for nanodevices.

Nanopore sequencing is a method for determining the order in whichnucleotides occur on a strand of deoxyribonucleic acid (DNA). A nanopore(also referred to a pore, nanochannel, hole, etc.) can be a small holein the order of several nanometers in internal diameter. The theorybehind nanopore sequencing is about what occurs when the nanopore issubmerged in a conducting fluid and an electric potential (voltage) isapplied across the nanopore. Under these conditions, a slight electriccurrent due to conduction of ions through the nanopore can be measured,and the amount of current is very sensitive to the size and shape of thenanopore. If single bases or strands of DNA pass (or part of the DNAmolecule passes) through the nanopore, this can create a change in themagnitude of the current through the nanopore. Other electrical oroptical sensors can also be positioned around the nanopore so that DNAbases can be differentiated while the DNA passes through the nanopore.

The DNA can be driven through the nanopore by using various methods, sothat the DNA might eventually pass through the nanopore. The scale ofthe nanopore can have the effect that the DNA may be forced through thehole as a long string, one base at a time, like thread through the eyeof a needle. Recently, there has been growing interest in applyingnanopores as sensors for rapid analysis of biomolecules such asdeoxyribonucleic acid (DNA), ribonucleic acid (RNA), protein, etc.Special emphasis has been given to applications of nanopores for DNAsequencing, as this technology holds the promise to reduce the cost ofsequencing below $1000/human genome.

SUMMARY

According to an embodiment, a method for fabricating nanochannels for ananodevice is provided. The method includes depositing an electricallyinsulating film on a substrate, patterning a nanowire on theelectrically insulating film, depositing an electrically insulatingmaterial on both the nanowire and the electrically insulating film, andforming a first circular hole in the electrically insulating material asan inlet. The first circular hole is formed over a first tip of thenanowire, and the first circular hole exposes the first tip. The methodincludes forming a second circular hole as an outlet. The secondcircular hole is formed over a second tip of the nanowire opposite thefirst tip, and the second circular hole exposes the second tip. Also,the method includes forming a nanochannel connecting the first circularhole to the second circular hole by etching away the nanowire viaflowing an etchant in the first circular hole and out the secondcircular hole. The method includes attaching a first reservoir over thefirst circular hole to be in connection with the nanochannel at aprevious location of the first tip, and attaching a second reservoirover the second circular hole to be in connection with the nanochannelat a previous location of the second tip.

According to an embodiment, a method for fabricating nanochannels for ananodevice is provided. The method includes depositing an electricallyinsulating film on a substrate, patterning nanowires on the electricallyinsulating film, depositing an electrically insulating material on boththe nanowires and the electrically insulating film, and forming firstcircular holes in the electrically insulating material as inlets. Thefirst circular holes are respectively formed over first tips of thenanowires. The first circular holes respectively expose the first tips.The method includes forming second circular holes as outlets. The secondcircular holes are respectively formed over second tips of the nanowiresopposite the first tips, and the second circular holes respectivelyexpose the second tips. Also, the method includes forming thenanochannels respectively connecting the first circular holes to thesecond circular holes by etching away the nanowires via flowing anetchant in the first circular holes and out the second circular holes,attaching first reservoirs individually over the first circular holes tobe in connection respectively with the nanochannels at previouslocations of the first tips, and attaching second reservoirsindividually over the second circular holes to be in connectionrespectively with the nanochannels at previous locations of the secondtips.

Additional features and advantages are realized through the techniquesof the present invention. Other embodiments and aspects of the inventionare described in detail herein and are considered a part of the claimedinvention. For a better understanding of the invention with theadvantages and the features, refer to the description and to thedrawings.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The subject matter which is regarded as the invention is particularlypointed out and distinctly claimed in the claims at the conclusion ofthe specification. The forgoing and other features, and advantages ofthe invention are apparent from the following detailed description takenin conjunction with the accompanying drawings in which:

FIGS. 1A through 1D illustrate processes to fabricate a nanometerchannel (i.e., nanochannel) in a nanodevice according to an embodiment,in which:

FIG. 1A illustrates an electrically insulating substrate with anelectrically insulating thin film underneath and an electricallyinsulating thin film above;

FIG. 1B illustrates a nanowire selectively positioned on the insulatingthin film;

FIG. 1C illustrates an insulating material deposited on both theinsulating thin film and the nanowire;

FIG. 1D illustrates the nanochannel formed by removing the nanowirewhich was previously covered by the insulating material;

FIGS. 2A through 2C illustrate processes to fabricate an array ofnanometer channels (i.e., nanochannels) at the wafer scale in ananodevice according to an embodiment, in which:

FIG. 2A illustrates an electrically insulating substrate with anelectrically insulating thin film underneath and an electricallyinsulating thin film above, and an array of nanowires are selectivelyplaced on the whole wafer;

FIG. 2B illustrates the insulating material deposited to cover both theelectrically insulating film and the array of the nanowires; and

FIG. 2C illustrates the array of nanochannels formed after selectivelyremoving/etching their corresponding nanowires.

FIG. 3A is a top view of a system for sequencing and/or detection in thenanodevice according to an embodiment.

FIG. 3B is a side view of the system according to an embodiment.

FIGS. 4A and 4B together illustrate a method of fabricating nanochannelsfor the nanodevice according to an embodiment.

FIG. 5 is a block diagram that illustrates an example of a computer(computer test setup) having capabilities, which may be included inand/or combined with embodiments.

DETAILED DESCRIPTION

According to an embodiment, a method is provided to fabricate an arrayof nanometer channels (also referred to as nanochannels) at the waterscale for DNA sequencing or other lab-on-a-chip-based analysis ofbiomolecules. A nanometer channel can provide a platform to studymolecular behaviors at the single molecule scale. The micro/nano channelcan sort, manipulate, and detect the DNA samples. There are manypossible ways to fabricate nanochannels, which include opticallithography, electron beam lithography, focus ion beam, nanoimprintlithography, and interferometic lithography. Each method has its ownadvantages, but it is very difficult to fabricate sub-10-nanometernanochannels by using those techniques.

In an embodiment, a method is introduced to fabricate (2D) nanochannelsat sub-10 nanometers, close to the physical dimension of targetmolecules (such as DNA, RNA, and amino acids), so that the nanochannelcan further confine the motion of a DNA/RNA molecule in lateraldirections. This allows nanoscopic information to be studied about themolecular transport of the target molecule in nanofluidic channels. Alsothe method can be scaled up to make nanometer channels at the waferlevel.

FIGS. 1A through 1D illustrate processes to fabricate a nanometerchannel (i.e., nanochannel) in a nanodevice 100 (and a nanodevice 200)for DNA/RNA sequencing or peptide detection. FIGS. 1A through 1D showprocesses for one nanochannel but apply to numerous nanochannels.

FIG. 1A shows an electrically insulating substrate 101 which may includea material such as silicon. An electrically insulating thin film 102 maybe deposited under the insulating substrate 101. An electricallyinsulating thin film 103 may be deposited on top of the insulatingsubstrate 101.

The electrically insulating thin films 102 and 103 may includematerials, such as hafnium oxide, silicon dioxide, etc. The electricallyinsulating substrate 101 may have a thickness of 700 micrometers for a200 mm in diameter wafer, and the electrically insulating thin films 102and 103 may have a thickness of several (e.g., 2, 3, 4, 5, etc.) or tens(10, 15, 20, 25, 30, etc.) of nanometers.

As discussed herein, view (A) is a cross-sectional view of thenanodevice 100 and 200, and view (B) is the top-view of the nanodevice100 and 200.

In FIG. 1B, a nanowire 104 (a nanometer wire) is selectively placed onthe insulating thin film 103. The nanowire 104 may be a single-wall ormultiwall carbon nanotube, silicon nanowire, etc.

An insulating material 105 is deposited on both the insulating thin film103 and the nanowire 104 as seen in FIG. 1C. The insulating material 105may be any insulating material, such as silicon dioxide. The insulatingmaterial 105 may have a thickness of several times the diameter ofnanowire, like tens (e.g., 10, 15, 20, 25, etc.) of nanometers.

The insulating material 105 covers the nanowire 104, and two openings106 and 107 are opened for a nanochannel. The two openings 106 and 107can be opened by reactive ion etching as understood by one skilled inthe art. The two opening 106 and 107 may have a diameter of 100micrometers (μm) to 1 millimeter (mm). In order to prevent shortage fromthe substrate 101, the depth of the two openings 106 and 107 is thethickness of nanowire 104. Particularly, the depth of the openings 106and 107 will stop at the insulating thin film 103 (e.g., withoutpenetrating or going through the insulating thin film 103).

In FIG. 1D, the nanochannel 108 (nanometer channel) is formed byremoving the nanowire 104 which was covered by the insulating material105. Oxygen plasma can be used to remove the nanowire 104 (e.g., carbonnanotube), thus leaving the patterned nanochannel 108 in place of thenanowire 104. The length of the nanochannel 108 can be from a fewnanometers (e.g., 4 nanometers) to hundreds of micrometers. The gas (ofthe oxygen plasma) can easily pass through and etch away the carbonnanotube (i.e., nanowire 104) with a length of a few nanometers (e.g., 4nanometers) to a few micrometers. The parameters (temperature, pressure)can be adjusted to control the etch rate for carbon nanotube to have adifferent length. The openings 106 and 107 are to be the inlet and theoutlet of a fluidic nanochannel 108 (as understood by one skilled in theart). The diameter of nanowire 104 determines the width of thenanochannel 108. The diameter of nanochannel 108 can range fromnanometers to micrometers, or even larger, which corresponds to thenanowire 104 diameter. Likewise, the length of the nanowire 104corresponds to the length of the nanochannel 108. The nanowire 104 canbe fabricated through standard semiconductor processes or other methods.For a nanowire 104 made of silicon, different diameters of thenanochannel 108 can be obtained by different reactive ion etch or wetetch time. In one case, the carbon nanotube may have a diameter of 1 to10 nm, and the silicon nanowire may have a diameter up to 100 nm.

In the view B of the top view, the dashed lines show that the newlyformed nanochannel 108 runs under the insulating material 105 connectingthe opening 106 (e.g., inlet) to the opening 107 (e.g., the outlet). Thenanochannel 108 is formed in a desired pattern without having to drillthrough the insulating material 105 using conventional opticallithography, electron beam lithography, focus ion beam, nanoimprintlithography, and interferometic lithography.

FIGS. 2A through 2C illustrate processes to fabricate an array ofnanometer channels (i.e., nanochannels 108) at the wafer scale in ananodevice 200 for DNA/RNA sequencing or peptide detection. The previousdiscussions of FIGS. 1A through 1D apply to FIGS. 2A through 2C.

FIG. 2A shows the cross-sectional view (A) and the top view (B) of anarray of nanometer wires, which are nanowires 104. The electricallyinsulating substrate 101 (which may be silicon) has electricallyinsulating film 103 deposited on top and electrically insulating film102 deposited underneath. The array of nanowires 104 are selectivelyplaced on the whole wafer.

In FIG. 2B, the insulating material 105 is deposited to completely coverboth the top of the electrically insulating film 103 and the array ofnanowires 104. The openings 106 and 107 are created to allow two ends(e.g., first tips and second tips) of an individual nanowire 104 to beexposed.

In FIG. 2C, each of the nanochannels (nanometer channels) 108 is formedafter selectively removing (i.e., etching away) their correspondingnanowires 104. The openings 106 and 107 are utilized as the inlets andoutlets of a fluidic nanochannel 108, as well as the openings for theprevious etching. Each nanochannel 108 is individually accessed throughits respective inlet and outlet (i.e., opening 106 and 107). The dashedlines show that the array of nanochannels 108 runs underneath theelectrically insulating material 105 connecting the respective openings106 to the openings 107. In one case, nanowires 104 with differentdiameters (e.g., carbon nanotubes with different diameters) may beutilized to make corresponding nanochannels 108 with differentdiameters.

FIGS. 3A and 3B illustrate a system 300 for DNA/RNA sequencing orpeptide detection in the nanodevice 100, 200. FIG. 3A shows a top viewand FIG. 3B shows a side view of the system 300. For the sake ofbrevity, the system 300 only shows 3 nanochannels 108 but it isunderstood that more or less than 3 nanochannels 108 may be included asdesired. The nanodevice 100, 200 includes all the layers as discussedherein, and discussion of the various layers is not repeated.

The openings 106 are particularly identified as (inlet) openings 106 a,106 b, and 106 c, which are respectively connected to its own reservoir350 (shown in FIG. 3B). The openings 107 are particularly identified as(outlet) openings 107 a, 107 b, and 107 c, which are respectivelyconnected to its own reservoir 355. Although not shown in FIG. 3A, anindividual reservoir 350 is sealed to and positioned on top ofrespective openings 106 a, 106 b, and 106 c. Similarly, an individualreservoir 355 is sealed to and positioned on top of respective openings107 a, 107 b, and 107 c. The respective reservoirs 350 and 355 have beenlifted off in the top view.

An electrode 310 a, 310 b, and 310 c is respectively in its ownindividual reservoir 350 that is positioned over a corresponding opening106 a, 106 b, and 106 c. Similarly, an electrode 311 a, 311 b, and 311 cis respectively in its own individual reservoir 355 that is positionedover a corresponding opening 107 a, 107 b, and 107 c.

Accordingly, a corresponding nanochannel 108 is connected to its owninlet reservoir 350 via its inlet opening 106 and is connected to itsown outlet reservoir 355 via its opening 107. Each reservoir 350, eachnanochannel 108, and each reservoir 355 are all filled with anelectrically conductive solution. The electrically conductive solutionmay be an electrolyte solution as understood by one skilled in the art.

The samples of DNA or peptide (represented as molecule(s) 370) can beintroduced (e.g., by a syringe or pump) into the respective reservoir350 for sequencing using one of the known techniques when the DNAmolecule 370 is the nanochannel 108. The electrodes 310 a, 310 b, and310 c and electrodes 311 a, 311 b, and 311 c may be Ag/AgCl electrodes,which can provide the electrical field inside respective nanochannels108 via voltage from respective voltage sources 316 a, 316 b, and 316 c.The individual current in each respective nanochannel 108 can bemonitored through respective current meters 315 a, 315 b, and 315 c, andthe bases of the DNA molecule 370 can be read as understood by oneskilled in the art.

FIGS. 4A and 4B illustrate a method 400 for fabricating nanochannels 108for the nanodevice 100, 200 according to an embodiment. Reference can bemade to FIGS. 1, 2, 3, and 5 in any combination.

The electrically insulating film 103 is deposited on the substrate 101at block 402. The nanowire(s) 104 are patterned on the electricallyinsulating film 103 at block 404. The electrically insulating material105 is deposited on and covers both the nanowires 104 and theelectrically insulating film 103 at block 406.

The first circular holes/openings 106 are respectively formed in theelectrically insulating material 105 as inlets, where the first circularholes/openings 106 are formed over the first tips (shown in FIGS. 1C and2B) of the nanowires 104 and the first circular holes/openings 106expose the first tips at block 408. The length of the exposed first tipof the nanowire 104 in the opening 106 may be few (e.g., 1, 2, 3, 4, 5 .. . 9) or tens (e.g., 10, 15, 20, 25, etc.) of nanometers.

At block 410, the second circular holes/openings are respectively formedin the electrically insulating material 105 as outlets, where the secondcircular holes/openings 107 are formed over second tips of the nanowires104 opposite the first tips and the second circular holes/openings 107expose the second tips. The length of the exposed second tips of thenanowire 104 in the opening 107 may be few (e.g., 1, 2, 3, 4, 5 . . . 9)or tens (e.g., 10, 15, 20, 25, etc.) of nanometers.

The nanochannels 108 respectively connecting the first circularholes/openings 106 to the second circular holes/openings 107 are formedby etching away the nanowires 104 via flowing an etchant in the firstcircular holes/openings 106 and out the second circular holes/openings107 at block 412.

The first reservoir 350 is attached (and sealed) over the first circularholes/openings 106 (as shown in FIG. 3B) to be in connection with therespective nanochannel 108 at the previous location of first tip atblock 414.

The second reservoir 355 is attached (and sealed) over the secondcircular holes/openings 107 to be in connection with the respectivenanochannels at the previous location of the second tip at block 416.

The nanochannels 108 are self-formed by removing the respectivenanowires 104. The first reservoirs 350, the second reservoirs 355, andthe nanochannels 108 are all filled with an electrically conductivesolution.

The method utilizes the first circular holes/openings 106 as both theinlets for flowing the etchant to originally form the respectivenanochannels 108 and as the inlets for driving (via voltage of thevoltage source 315) molecule(s) 370 from the respective first reservoirs350 into their respectively connected nanochannels 108. The methodincludes utilizing the second circular holes/openings 107 as both theoutlets for exiting the etchant to originally form the respectivenanochannels 108 and as the outlets for driving the molecule from thenanochannels 108 into the second reservoirs 355.

In FIGS. 3A and 3B, the voltage source 315 generates an electric fieldthat drives the molecule 370 from the first reservoir 350, through thefirst circular hole/opening 106, into the nanochannel 108, through thesecond circular hole 107, and out into the second reservoir 355. Thesystem 300 sequences the molecule 370 while in the nanochannel 108.

The first circular hole/opening 106 is a first connection from the firstreservoir 350 to the nanochannel 108, and the second circularhole/openings 107 is a second connection from the second reservoir 355to the nanochannel 108.

The nanowires 104 may be a carbon nanotube, where the etchant removesthe respective carbon nanotubes to leave behind the nanochannels 108without affecting the insulating material 105. The diameter of thenanochannels 108 is caused by and corresponds to the diameter of therespective carbon nanotubes. Also, the length of the nanochannels 108 iscaused by and corresponds to the length of the carbon nanotubes.

The depth of the first circular holes/openings 106 is down to the carbonnanotube at the first tip without reaching the substrate 101, and depthof the second circular holes/openings 107 is down to the carbon nanotubeat the second tip without reaching the substrate 101.

FIG. 5 illustrates an example of a computer 500 (e.g., as part of thecomputer test setup for testing and analysis) which may implement,control, and/or regulate the voltage source 315, and measurements of theammeter 316 as discussed herein.

Various methods, procedures, modules, flow diagrams, tools,applications, circuits, elements, and techniques discussed herein mayalso incorporate and/or utilize the capabilities of the computer 500.Moreover, capabilities of the computer 500 may be utilized to implementfeatures of exemplary embodiments discussed herein. One or more of thecapabilities of the computer 500 may be utilized to implement, toconnect to, and/or to support any element discussed herein (asunderstood by one skilled in the art) in FIGS. 1-4. For example, thecomputer 500 which may be any type of computing device and/or testequipment (including ammeters, voltage sources, connectors, etc.).Input/output device 570 (having proper software and hardware) ofcomputer 500 may include and/or be coupled to the nanodevices andstructures discussed herein via cables, plugs, wires, electrodes, patchclamps, etc. Also, the communication interface of the input/outputdevices 570 comprises hardware and software for communicating with,operatively connecting to, reading, and/or controlling voltage sources,ammeters, and current traces (e.g., magnitude and time duration ofcurrent), etc., as discussed herein. The user interfaces of theinput/output device 570 may include, e.g., a track ball, mouse, pointingdevice, keyboard, touch screen, etc., for interacting with the computer500, such as inputting information, making selections, independentlycontrolling different voltages sources, and/or displaying, viewing andrecording current traces for each base, molecule, biomolecules, etc.

Generally, in terms of hardware architecture, the computer 500 mayinclude one or more processors 510, computer readable storage memory520, and one or more input and/or output (I/O) devices 570 that arecommunicatively coupled via a local interface (not shown). The localinterface can be, for example but not limited to, one or more buses orother wired or wireless connections, as is known in the art. The localinterface may have additional elements, such as controllers, buffers(caches), drivers, repeaters, and receivers, to enable communications.Further, the local interface may include address, control, and/or dataconnections to enable appropriate communications among theaforementioned components.

The processor 510 is a hardware device for executing software that canbe stored in the memory 520. The processor 510 can be virtually anycustom made or commercially available processor, a central processingunit (CPU), a data signal processor (DSP), or an auxiliary processoramong several processors associated with the computer 500, and theprocessor 510 may be a semiconductor based microprocessor (in the formof a microchip) or a macroprocessor.

The computer readable memory 520 can include any one or combination ofvolatile memory elements (e.g., random access memory (RAM), such asdynamic random access memory (DRAM), static random access memory (SRAM),etc.) and nonvolatile memory elements (e.g., ROM, erasable programmableread only memory (EPROM), electronically erasable programmable read onlymemory (EEPROM), programmable read only memory (PROM), tape, compactdisc read only memory (CD-ROM), disk, diskette, cartridge, cassette orthe like, etc.). Moreover, the memory 520 may incorporate electronic,magnetic, optical, and/or other types of storage media. Note that thememory 520 can have a distributed architecture, where various componentsare situated remote from one another, but can be accessed by theprocessor 510.

The software in the computer readable memory 520 may include one or moreseparate programs, each of which comprises an ordered listing ofexecutable instructions for implementing logical functions. The softwarein the memory 520 includes a suitable operating system (O/S) 550,compiler 540, source code 530, and one or more applications 560 of theexemplary embodiments. As illustrated, the application 560 comprisesnumerous functional components for implementing the features, processes,methods, functions, and operations of the exemplary embodiments.

The operating system 550 may control the execution of other computerprograms, and provides scheduling, input-output control, file and datamanagement, memory management, and communication control and relatedservices.

The application 560 may be a source program, executable program (objectcode), script, or any other entity comprising a set of instructions tobe performed. When a source program, then the program is usuallytranslated via a compiler (such as the compiler 540), assembler,interpreter, or the like, which may or may not be included within thememory 520, so as to operate properly in connection with the O/S 550.Furthermore, the application 560 can be written as (a) an objectoriented programming language, which has classes of data and methods, or(b) a procedure programming language, which has routines, subroutines,and/or functions.

The I/O devices 570 may include input devices (or peripherals) such as,for example but not limited to, a mouse, keyboard, scanner, microphone,camera, etc. Furthermore, the I/O devices 570 may also include outputdevices (or peripherals), for example but not limited to, a printer,display, etc. Finally, the I/O devices 570 may further include devicesthat communicate both inputs and outputs, for instance but not limitedto, a NIC or modulator/demodulator (for accessing remote devices, otherfiles, devices, systems, or a network), a radio frequency (RF) or othertransceiver, a telephonic interface, a bridge, a router, etc. The I/Odevices 570 also include components for communicating over variousnetworks, such as the Internet or an intranet. The I/O devices 570 maybe connected to and/or communicate with the processor 510 utilizingBluetooth connections and cables (via, e.g., Universal Serial Bus (USB)ports, serial ports, parallel ports, FireWire, HDMI (High-DefinitionMultimedia Interface), etc.).

In exemplary embodiments, where the application 560 is implemented inhardware, the application 560 can be implemented with any one or acombination of the following technologies, which are each well known inthe art: a discrete logic circuit(s) having logic gates for implementinglogic functions upon data signals, an application specific integratedcircuit (ASIC) having appropriate combinational logic gates, aprogrammable gate array(s) (PGA), a field programmable gate array(FPGA), etc.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of onemore other features, integers, steps, operations, element components,and/or groups thereof.

The corresponding structures, materials, acts, and equivalents of allmeans or step plus function elements in the claims below are intended toinclude any structure, material, or act for performing the function incombination with other claimed elements as specifically claimed. Thedescription of the present invention has been presented for purposes ofillustration and description, but is not intended to be exhaustive orlimited to the invention in the form disclosed. Many modifications andvariations will be apparent to those of ordinary skill in the artwithout departing from the scope and spirit of the invention. Theembodiment was chosen and described in order to best explain theprinciples of the invention and the practical application, and to enableothers of ordinary skill in the art to understand the invention forvarious embodiments with various modifications as are suited to theparticular use contemplated

The flow diagrams depicted herein are just one example. There may bemany variations to this diagram or the steps (or operations) describedtherein without departing from the spirit of the invention. Forinstance, the steps may be performed in a differing order or steps maybe added, deleted or modified. All of these variations are considered apart of the claimed invention.

While the preferred embodiment to the invention had been described, itwill be understood that those skilled in the art, both now and in thefuture, may make various improvements and enhancements which fall withinthe scope of the claims which follow. These claims should be construedto maintain the proper protection for the invention first described.

What is claimed is:
 1. A nanodevice with nano channels, the nanodevicecomprising: an electrically insulating film deposited on a substrate; ananowire patterned on the electrically insulating film; an electricallyinsulating material deposited on both the nanowire and the electricallyinsulating film; a first circular hole formed in the electricallyinsulating material as an inlet, the first circular hole formed over afirst tip of the nanowire, the first circular hole exposing the firsttip; a second circular hole formed as an outlet, the second circularhole formed over a second tip of the nanowire opposite the first tip,the second circular hole exposing the second tip; a nanochannel formedconnecting the first circular hole to the second circular hole byetching away the nanowire via flowing an etchant in the first circularhole and out the second circular hole; a first reservoir attached overthe first circular hole to be in connection with the nanochannel at aprevious location of the first tip; and a second reservoir attached overthe second circular hole to be in connection with the nanochannel at aprevious location of the second tip.
 2. The nanodevice of claim 1,wherein the nanochannel is self-formed by removing the nanowire.
 3. Thenanodevice of claim 1, wherein the first circular hole is both the inletfor flowing the etchant to form the nanochannel and the inlet fordriving a molecule from the first reservoir into the nanochannel; andwherein the second circular hole is both the outlet for exiting theetchant to form the nanochannel and the outlet for driving the moleculefrom the nanochannel into the second reservoir.
 4. The nanodevice ofclaim 1, wherein the first circular hole is a first connection from thefirst reservoir to the nanochannel; and wherein the second circular holeis a second connection from the second reservoir to the nano channel. 5.The nanodevice of claim 1, wherein the nanowire is a carbon nanotube;wherein the etchant removes the carbon nanotube to leave the nanochannel; wherein a diameter of the nanochannel is caused by andcorresponds to a diameter of the carbon nanotube; wherein a length ofthe nanochannel is caused by and corresponds to a length of the carbonnanotube; and wherein a first depth of the first circular hole is downto the carbon nanotube at the first tip without reaching the substrate;and wherein a second depth of the second circular hole is down to thecarbon nanotube at the second tip without reaching the substrate.